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rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?20 13, rf micro devices, inc. 1 of 11 RFHA3944 6 5 w gan wide - b and power amplifier the RFHA3944 is a 48v, 6 5w high power discrete amplifier designed for military communications, electronic warfare, general purpose broadband amplifier, commercial wireless infrastructure, and industrial/scientific/medical applications. using a second generation advanced high power density gallium nitride (gan) semiconductor process with improved linearity, these high - performance amplifiers achi eve high efficiency, excellent linearity, and flat gain and power over a broad frequency range in a single amplifier design. the RFHA3944 is an unmatched gan transistor, packaged in a hermetic flanged ceramic package. this package provides excellent therma l stability through the use of advanced heat sink and power dissipation technologies. ease of integration is accomplished by incorporating simple, optimized matching networks external to the package that provide wideband gain and power performance in a sin gle amplifier. functional block diagram o rdering information RFHA3944 s2 sample bag with 2 pieces RFHA3944 sb bag with 5 pieces RFHA3944 sq bag with 25 pieces RFHA3944 sr s hort reel with 50 pieces RFHA3944 tr13 13 reel with 4 00 pieces RFHA3944 pcba - 41 1 fully a ssembled evaluation b oard optimized for 2.14ghz; 48v package: flanged ceramic, 2 pin , rf 360 - 2 features broadband operation ? tunable from dc to 4ghz ? instantaneous: 800mhz to 2500mhz advanced gan hemt technology peak modulated power > 65 w advanced heat - sink technology 48v typical modulated performance ? p out 42.4 dbm ? gain 14.7 db ? drain efficiency 3 1 % ? acp - 4 2 dbc 48v typical cw performance ? p out 4 8.1 dbm ? gain 14.5 db ? drain efficiency 5 5 % - 40 c to 85 c operating temperature applications military communications general purpose broadband amplifiers electronic warfare public mobile radios commercial wireless infrastructure cellular and wimax infrastructure industrial, scientific, and medical RFHA3944 RFHA3944
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?20 13, rf micro devices, inc. 2 of 11 absolute maximum rat ings parameter rating unit drain voltage (v d ) 150 v gate voltage (v g ) - 8 to + 2 v gate current ( i g ) 30 ma operational voltage 50 v ruggedness (vswr) 10:1 storage temperature range - 6 5 to +12 5 c operating temperature range (t l ) - 40 to +8 5 c operating junction temperature (t j ) 2 50 c human body model class 1 b mttf (t j < 200 c, 95% confidence limits)* 3.2 e + 0 6 hours mttf (t j < 2 5 0 c, 95% confidence limits)* 5.3 e + 0 4 hours thermal resistance, rth (junction to case) measured at t c = 85c, dc bias only 1.7 c/w caution! esd sensitive device. rohs (restriction of hazardous substances): compliant per eu directive 2011/65/eu. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. * mttf C median time to failure for wear - out failure mode (30% i dss degradation) which is determined by the technology process r eliability. refer to product qualification report for fit (random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the de vice voltage and current must not exceed the maximum operating values specified in the table above . bias conditions should also sa tisfy the following expression: p diss < (t j C t c ) / r th j - c and t c = t case nominal operating parameters parameter specification unit condition min typ max recommended operating conditions drain voltage (v dsq ) 28 48 v gate voltage (v gsq ) - 1.5 - 0.9 - 0. 4 v drain bias current (i dsq ) 540 ma frequency of operation dc 4000 ghz dc function test i g( o ff ) C gate leakage 0.0 2 ma v g = - 8v, v d = 0v i d( o ff ) C drain leakage 0.2 ma v g = - 8v, v d = 48 v v gs ( th ) C threshold voltage - 1. 4 v v d = 48 v, i d = 20 ma v ds( on ) C drain voltage at high c urrent 0.75 v v g = 0v, i d = 1.5a
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 3 of 11 RFHA3944 parameter specification unit condition min typ max capacitance c rss 3.5 pf v g = - 8v, v d = 0v c iss 29 pf c oss 21 pf rf functional test test conditions: v dsq = 48v, i d s q = 540 ma, t = 25c , wcdma acp measured at 5.0mhz at 3.84mhz bw, performance in a standard tuned test fixture v gs q - 1. 3 - 0.9 - 0. 6 v v d sq = 48v, i d sq = 540 ma gain 13.5 14.5 db is95 (9 channel model, 9.8db par at 0.01% ccdf), p out = 42.4 dbm, f = 2140mh z drain efficiency 27.5 31 % input return loss - 11 - 7 db output par (ccdf at 0.01%) 5.0 6. 0 d b rf typical performance test conditions: v dsq = 48v, i d s q = 540ma, t = 25c , wcdma acp measured at 5.0mhz at 3.84mhz bw, performance in a standard tuned test fixture gain 15.0 db wcdma ( 3gpp tm1, 7.5db par at 0.01% ccdf), p out = 41.8 dbm , f = 2140 mh z drain efficiency 28.0 % input return loss - 12 db adjacent channel power - 42 db c gain 14.5 db cw , f = 2140mhz output power 48.1 dbm drain efficiency 55 %
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 4 of 11 RFHA3944 t ypical performance in standard fixed tuned test fixture optimized for linearity ( t = 25c unless noted )
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 5 of 11 RFHA3944 t ypical performance in standard fixed tuned test fixture optimized for linearity ( t = 25c unless noted ) (continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 6 of 11 RFHA3944 t ypical performance in standard fixed tuned test fixture optimized for linearity ( t = 25c unless noted ) (continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 7 of 11 RFHA3944 evaluation board schematic evaluation board bill of materials (bom) item value manufacturer manufacturers p/n c1, c2, c10, c11 33pf atc atc800a330jt c3, c14 0.1uf murata grm32nr72a104ka01l c4, c13 4.7uf murata grm55er72a475ka01l c 15 1.8 pf atc atc800a1r8bt c 6 2.0 pf atc atc800a2r0bt c 7 0.3 pf atc atc800a0r3bt c 8 1.5 pf atc atc800a1r5bt c 9 2.4p f atc atc800a2r4bt c12 330 u f panasonic eeu - fc2a331 c 5 100 u f panasonic ece - v1ha101up r1 10 panasonic erj - 8geyj100v
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 8 of 11 RFHA3944 package drawing pin names and descriptions pin name description 1 gate v g q rf input 2 drain v d q rf output 3 source ground base
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 9 of 11 RFHA3944 bias instruction for RFHA3944 evaluation board esd sensitive material. please use proper esd precautions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the groun d supply terminal, and ensure that both the vg and vd grounds are also connected to this ground terminal. 3. apply - 5 v to vg. 4. apply 48 v to vd. 5. increase v g until drain current reaches 540 ma or desired bias point. 6. turn on the rf input.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 10 of 11 RFHA3944 2.14ghz evaluation board layout device impedances frequency (mhz) z source () z load () 2110 1.94 - j0.7 5.7 + j0.8 2140 2.13 - j0.2 5.9 + j1.3 2170 2.3 + j0.4 6 + j2 note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak power, and linearity performance across the entire frequency bandwidth.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 131024 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is be lieved to be accurate. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infr ingement of patents or other rights of third parties resulting from its use. no license is granted by implication or otherwise unde r any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. 11 of 11 RFHA3944 device handling/environmental conditions rfmd does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. gan hemt capacitances the physical structure of the gan hemt results in three terminal capacitors similar t o other fet technologies. these capacitances exist across all three terminals of the device. the physical manufactured characteristics of the device determin e the value of the c ds (drain to source), c gs (gate to source) and c gd (gate to drain). these capacitances change value as the terminal voltages are varied. rfmd presents the three terminal capacitances measured with the gate pinched off (v gs = - 8v) and zero volts appli ed to the drain. during the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step. any internal matching is included in the terminal capacitance measurements. the capacitan ce values pr esented in the typical characteristics table of the device represent the measured input (c iss ), output (c oss ), and reverse (c rss ) capacitance at the stated bias voltages. the relationship to three terminal capacitances is as follows: c iss = c gd + c gs c oss = c gd + c ds c rss = c gd dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be tak en to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximu m limits. rfmd recommends applying v gs = - 5v before applying any v ds . rf power transistor performa nce capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical pe rformance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. the user may choose alternate conditions for biasing this device based on performance tradeoffs. mou nting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal characteristics. this is measured using ir microscopy capturing the device under test temperature at the hottest spot of the die. at the same time, th e package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in orde r to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the maximum of 200 c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of t he package including heatsinking systems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device.

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